ORGANIC-INORGANIC COMPOSITE SEMICONDUCTOR DEVICE USING ELECTROCHEMICAL PROCESS AND MANUFACTURING METHOD THEREOF

WIPO Patent Application WO/2017/119549

A1

The present invention relates to an organic-inorganic composite semiconductor device and a method for manufacturing the same. More particularly, the present invention relates to an organic-inorganic composite semiconductor device using an electrochemical process and a method for manufacturing the same, the organic-inorganic composite semiconductor device comprising: an inorganic structure formed on a metal structure and having a plurality of voids interconnected with each other; and an organic structure disposed in the voids of the inorganic structure. The organic-inorganic composite semiconductor device using an electrochemical process according to the present invention has low thermal conductivity, a high Seebeck coefficient, high electric conductivity, and excellent thermoelectric properties as an organic material and an inorganic material are continuously connected to each other.

WO/2003/081686	DOUBLE OXIDE WITH n TYPE THERMOELECTRIC CHARACTERISTICS
JP3919469	PLASTIC OR GLASS THERMOELECTRIC POWER GENERATING MODULE, AND MANUFACTURING METHOD THEREFOR
WO/2012/135428	THERMOELECTRIC MATERIALS

LIM JAE HONG (KR)
LIM DONG CHAN (KR)
SONG YOUNG SUP (KR)
ROH SANG HYUN (KR)
SHIM JI HOON (KR)

PCT/KR2016/003811

July 13, 2017

April 12, 2016

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KOREA MACH & MATERIALS INST (KR)

H01L35/12; H01L35/14; H01L35/16; H01L35/18; H01L35/24; H01L35/32; H01L35/34; H01L51/05

KR20120017917A	2012-02-29
KR20150046553A	2015-04-30
KR20150050512A	2015-05-08
KR20110061751A	2011-06-10
JPH1041556A	1998-02-13

KASAN IP & LAW FIRM (KR)

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