Title:
ORGANIC LIGHT EMITTING DIODE USING P-TYPE OXIDE SEMICONDUCTOR CONTAINING GALLIUM, AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/039585
Kind Code:
A1
Abstract:
The present invention relates to an organic light emitting diode using a p-type oxide semiconductor containing gallium, and a preparation method therefor. According to the present invention, provided is an organic light emitting diode comprising a cathode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an anode, wherein the hole injection layer is a p-type oxide semiconductor containing Ga.
Inventors:
JANG JIN (KR)
KIM JEONG GI (KR)
AVIS CHRISTOPHE VINCENT (KR)
KIM JEONG GI (KR)
AVIS CHRISTOPHE VINCENT (KR)
Application Number:
PCT/KR2015/009586
Publication Date:
March 17, 2016
Filing Date:
September 11, 2015
Export Citation:
Assignee:
UNIV KYUNG HEE UNIV IND COOP GROUP (KR)
International Classes:
C09K11/06; H01L51/50; H01L51/52; H01L51/56
Domestic Patent References:
| WO2008075794A1 | 2008-06-26 | |||
| WO2013183726A1 | 2013-12-12 |
Foreign References:
| KR20120010060A | 2012-02-02 | |||
| JP2009267002A | 2009-11-12 | |||
| KR20090079846A | 2009-07-22 |
Attorney, Agent or Firm:
SONG, IN-HO (KR)
송인호 (KR)
송인호 (KR)
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