ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2012/029664

A1

Provided is an organic thin film transistor which comprises a charge injection layer that is not easily oxidized even in the atmosphere and is not easily deteriorated functionally. Specifically provided is an organic thin film transistor (10) which comprises: a gate electrode (20A); a first source/drain electrode (60A); a second source/drain electrode (60B); an organic semiconductor layer (40) that is arranged between the first source/drain electrode and the gate electrode and between the second source/drain electrode and the gate electrode; and charge injection layers (50A, 50B) that are respectively arranged between the first source/drain electrode and the organic semiconductor layer and between the second source/drain electrode and the organic semiconductor layer so as to be respectively in contact with the first source/drain electrode and the second source/drain electrode. The charge injection layers contain an ionic polymer that has charge injection characteristics.

JP2016192554	P-TYPE OXIDE, P-TYPE OXIDE MANUFACTURING COMPOSITION, P-TYPE OXIDE MANUFACTURING METHOD, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM
JP2023121797	STORAGE DEVICE
WO/2011/010415	METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

KIM KI-BEOM (JP)
ONO YOSHINOBU (JP)

PCT/JP2011/069325

March 08, 2012

August 26, 2011

Click for automatic bibliography generation  

SUMITOMO CHEMICAL CO (JP)
KIM KI-BEOM (JP)
ONO YOSHINOBU (JP)

H01L29/786; C08G61/00; H01L21/28; H01L21/336; H01L29/417; H01L51/05

WO2010117075A1

2010-10-14

JP2005327797A	2005-11-24
JP2007327058A	2007-12-20
JP2009059751A	2009-03-19
JP2006253475A	2006-09-21
JP2010003747A	2010-01-07

SAKAI, Hiroaki et al. (JP)
Hiroaki Sakai (JP)

View/Download PDF      PDF Help

Previous Patent: NITROGEN-TREATED-WATER GENERATING DEVICE, NITROGEN-TREATED-WATER GENERATING METHOD, NITROGEN-TREATED...

Next Patent: PLASTIC BOTTLE