Title:
ORGANIC THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/090895
Kind Code:
A1
Abstract:
Disclosed are an organic thin-film transistor and a preparation method therefor. The organic thin-film transistor comprises: a substrate (20); a source-drain electrode layer (21) formed on the substrate (20); an organic semiconductor layer (22) formed on the source-drain electrode layer (21); an organic insulating layer (23) formed on the organic semiconductor layer (22); a charge injection layer (24) formed on the organic insulating layer (23); and a gate electrode layer (25) formed on the charge injection layer (24). The organic thin-film transistor structure and the preparation method therefor improve the stability of an organic thin-film transistor device.
Inventors:
XU HONGYUAN (CN)
Application Number:
PCT/CN2017/116285
Publication Date:
May 16, 2019
Filing Date:
December 14, 2017
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L51/05; H01L51/40
Foreign References:
| CN207009479U | 2018-02-13 | |||
| CN101654279A | 2010-02-24 | |||
| CN1992370A | 2007-07-04 | |||
| CN101308904A | 2008-11-19 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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