Title:
ORGANIC THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2014/192282
Kind Code:
A1
Abstract:
The purpose of the present invention is to obtain an organic thin film transistor having a structure in which the reliability of the achievement of a characteristic-improving effect is improved. The present invention is an organic thin film transistor (1) that is provided with an organic semiconductor layer (40), a source electrode (50), a drain electrode (60), a gate electrode (20), and a gate insulating film (30) and wherein: a first high-concentration section (43) is provided in an area within the organic semiconductor layer (40) that extends toward the drain electrode (60) side from an end position (A) of the source electrode (50) on the drain electrode side to a position defined by a distance (x1), said high-concentration section (43) having a higher concentration of impurities than the concentration of impurities in the area on the drain electrode (60) side that is adjacent to the aforementioned area; and, when the distance between the source electrode (50) and the drain electrode (60) is L, x1 < L.
Inventors:
NODA KEI (JP)
TOYABE TORU (JP)
WADA YASUO (JP)
WATAHIKI TSUTOMU (JP)
OKAMOTO KUNIAKI (JP)
TOYABE TORU (JP)
WADA YASUO (JP)
WATAHIKI TSUTOMU (JP)
OKAMOTO KUNIAKI (JP)
Application Number:
PCT/JP2014/002765
Publication Date:
December 04, 2014
Filing Date:
May 26, 2014
Export Citation:
Assignee:
WAKO PURE CHEM IND LTD (JP)
International Classes:
H01L29/786; H01L21/28; H01L51/05; H01L51/40
Domestic Patent References:
| WO2010116768A1 | 2010-10-14 |
Foreign References:
| JP2002204012A | 2002-07-19 | |||
| JP2013045971A | 2013-03-04 | |||
| JP2014056955A | 2014-03-27 |
Attorney, Agent or Firm:
YANAGIDA, Masashi et al. (JP)
Seiji Yanagida (JP)
Seiji Yanagida (JP)
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