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Title:
ORGANIC THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2019/065056
Kind Code:
A1
Abstract:
Provided is an organic thin film transistor wherein carrier mobility is high. This organic thin film transistor comprises a gate electrode, a gate insulation layer (A), a gate insulation layer (B), an organic semiconductor layer, a source electrode, and a drain electrode. The gate insulation layer (A) and the gate insulation layer (B) are provided between the gate electrode and the organic semiconductor layer. One surface of the gate insulation layer (B) is adjacent to the organic semiconductor layer. When γL represents the surface free energy of the gate insulation layer (A), and γS represents the surface free energy of the gate insulation layer (B), γL and γS satisfy formula (11). The gate insulation layer (B) is a layer containing a compound having a group represented by formula (1). (1) -(C=O)-NR- (11) γL-γS ≥ 5

Inventors:
ITO, Shinya (LIMITED 6, Kitahara, Tsukuba-sh, Ibaraki 94, 〒3003294, JP)
YOKOI, Yuki (LIMITED 6, Kitahara, Tsukuba-sh, Ibaraki 94, 〒3003294, JP)
YOSHIKAWA, Eiji (LIMITED 6, Kitahara, Tsukuba-sh, Ibaraki 94, 〒3003294, JP)
Application Number:
JP2018/031903
Publication Date:
April 04, 2019
Filing Date:
August 29, 2018
Export Citation:
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Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED (27-1, Shinkawa 2-chome Chuo-k, Tokyo 60, 〒1048260, JP)
International Classes:
H01L29/786; C08F220/22; C08F220/34; C08G61/12; G01N27/00; H01L51/05; H01L51/30
Domestic Patent References:
WO2017141933A12017-08-24
WO2017141932A12017-08-24
WO2013129406A12013-09-06
Foreign References:
JP2010278173A2010-12-09
JP2013545286A2013-12-19
JP2011523201A2011-08-04
Attorney, Agent or Firm:
NAKAYAMA, Tohru et al. (LIMITED 5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 50, 〒5418550, JP)
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