ORGANOMETALLIC COMPOUND, PRECURSOR COMPOSITION COMPRISING SAME, AND METHOD FOR MANUFACTURING THIN FILM USING SAME

WIPO Patent Application WO/2022/025333

A1

The present invention relates to a vapor deposition compound capable of being deposited as a thin film through vapor deposition and, in particular, to: an organometal-containing compound which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent reactivity, volatility, and thermal stability; a precursor composition comprising the organometallic compound; a method for manufacturing a thin film using the precursor composition; and an organometal-containing thin film manufactured using the precursor composition.

KIM HYO-SUK (KR)
PARK MIN-SUNG (KR)
NIM MIN-HYUK (KR)
SEOK JANG-HYEON (KR)
PARK JUNG WOO (KR)

PCT/KR2020/010194

February 03, 2022

August 03, 2020

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HANSOL CHEMICAL CO LTD (KR)

C07F13/00; C23C16/18; C23C16/455

KR20190020148A	2019-02-27
KR101962355B1	2019-03-26
JP2007153869A	2007-06-21

NORMAND ADRIEN T., HAWKES KIRSTY J., CLEMENT NICOLAS D., CAVELL KINGSLEY J., YATES BRIAN F.: "Atom-Efficient Catalytic Coupling of Imidazolium Salts with Ethylene Involving Ni−NHC Complexes as Intermediates:  A Combined Experimental and DFT Study", ORGANOMETALLICS, vol. 26, no. 22, 1 October 2007 (2007-10-01), pages 5352 - 5363, XP055890671, ISSN: 0276-7333, DOI: 10.1021/om070181e
FREEMAN LUCAS A., WALLEY JACOB E., DICKIE DIANE A., GILLIARD ROBERT J.: "Low-nuclearity magnesium hydride complexes stabilized by N-heterocyclic carbenes", DALTON TRANSACTIONS, vol. 48, no. 46, 26 November 2019 (2019-11-26), Cambridge , pages 17174 - 17178, XP055890674, ISSN: 1477-9226, DOI: 10.1039/C9DT03915E

HANYANG PATENT FIRM (KR)

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