Title:
OVERLAY FILM FORMING COMPOSITION AND RESIST PATTERN FORMATION METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2013/183686
Kind Code:
A1
Abstract:
[Problem] To provide an overlay film forming composition in which in a lithography method using extreme ultraviolet there is no pattern deterioration caused by deep ultraviolet light, and in which the generation of gas during exposure can be suppressed. [Solution] An overlay film forming composition that includes a water soluble polymer comprising a hydrophilic group and a deep ultraviolet light absorbing group which absorbs light with a wavelength of 170-300 nm, and an aqueous solvent, in which the water content of the aqueous solvent is equal to or greater than 70% by weight of the total weight of the aqueous solvent. A pattern can be formed by applying the overlay film forming composition on top of the resist film, hardening the overlay film forming composition by applying heat, exposing the composition to extreme ultraviolet light, and then developing the composition.
Inventors:
WANG XIAOWEI (JP)
SUZUKI MASATO (JP)
PAWLOWSKI GEORG (JP)
SUZUKI MASATO (JP)
PAWLOWSKI GEORG (JP)
Application Number:
PCT/JP2013/065626
Publication Date:
December 12, 2013
Filing Date:
June 05, 2013
Export Citation:
Assignee:
AZ ELECTRONIC MATERIALS LUXEMBOURG SARL (LU)
International Classes:
G03F7/11; C08F212/02; C08F220/02; H01L21/027
Foreign References:
| JP2009157080A | 2009-07-16 | |||
| JP2007316188A | 2007-12-06 | |||
| JP2008198788A | 2008-08-28 | |||
| JP2010160283A | 2010-07-22 |
Attorney, Agent or Firm:
KATSUNUMA Hirohito et al. (JP)
Katsunuma Hirohito (JP)
Katsunuma Hirohito (JP)
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