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Title:
OVERVOLTAGE PROTECTION CIRCUIT OF MOS TRANSISTOR IN WIRELESS RECEIVING CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2019/200612
Kind Code:
A1
Abstract:
An overvoltage protection circuit, which relates to the technical field of electronics and which comprises a first detection circuit (11) and a protection circuit (12); the first detection circuit (11) is used for outputting a first mark signal (60) according to an input signal (50) and a reference signal (40) of an input terminal (200) of a wireless receiving circuit (20); the input terminal (200) of the wireless receiving circuit (20) is coupled to a first MOS transistor (21) comprised in the wireless circuit (20); and the protection circuit (12) enters a protection state in response to the first mark signal (60) so as to attenuate the voltage amplitude of the input signal (50). The overvoltage protection circuit is used for overvoltage protection and may accurately and promptly protect a MOS transistor in case of overvoltage of a MOS transistor in a wireless receiving circuit, improving the service life of the MOS transistor.

Inventors:
WANG, Hongbo (Huawei Administration Building, Bantian Longgang Distric, Shenzhen Guangdong 9, 518129, CN)
Application Number:
CN2018/083927
Publication Date:
October 24, 2019
Filing Date:
April 20, 2018
Export Citation:
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Assignee:
HUAWEI TECHNOLOGIES CO., LTD. (Huawei Administration Building, Bantian Longgang Distric, Shenzhen Guangdong 9, 518129, CN)
International Classes:
H03K17/08; G08C17/02
Foreign References:
CN106411114A2017-02-15
CN106411114A2017-02-15
CN103699929A2014-04-02
CN102004939A2011-04-06
CN104617795A2015-05-13
DE102014209729A12015-12-17
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (8F Building 11, No. 31 Jiaoda East Road Haidian District, Beijing 4, 100044, CN)
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