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Title:
OXIDE-BASED RESISTIVE SWITCHING MEMORY ELEMENT USING SINGLE NANOPORE STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/169269
Kind Code:
A1
Abstract:
An oxide-based resistive switching memory element using a single nanopore structure and a manufacturing method therefor are disclosed. The resistive switching memory element manufacturing method comprises: a lower electrode layer forming step of forming a lower electrode layer on a substrate; a memory material layer forming step of forming a memory material layer on the lower electrode layer; a pore-forming metal layer forming step of forming a pore-forming metal layer in a preset region of the memory material layer; a pore forming step of forming a pore by removing the memory material layer at a lower part of the pore-forming metal layer; and an upper electrode forming step of forming an upper electrode on the formed pore.

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Inventors:
WANG GUN UK (KR)
KWON SOON BANG (KR)
Application Number:
PCT/KR2018/002894
Publication Date:
September 20, 2018
Filing Date:
March 12, 2018
Export Citation:
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Assignee:
UNIV KOREA RES & BUS FOUND (KR)
International Classes:
H01L45/00
Foreign References:
KR20160088380A2016-07-25
KR20140070672A2014-06-10
US20080212259A12008-09-04
US20090029031A12009-01-29
US20130143380A12013-06-06
Attorney, Agent or Firm:
B&IP-JOOWON PATENT AND LAW FIRM (KR)
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