OXIDE DIELECTRIC AND METHOD FOR MANUFACTURING SAME, AND SOLID STATE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME - NAT UNIVERSITY CORP JAPAN ADVANCED INST OF SCIENCE AND TECHNOLOGY

Title:

OXIDE DIELECTRIC AND METHOD FOR MANUFACTURING SAME, AND SOLID STATE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2016/013416

Kind Code:

A1

Abstract:

[Problem] To provide an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, semiconductor device, or micro-electrical-mechanical system) equipped with the oxide dielectric. [Solution] An oxide layer (30) including one of the oxide dielectrics of the present invention is a layer of oxide (which may have unavoidable impurities) that includes bismuth (Bi) and niobium (Nb), and has a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a β-BiNbO4-type crystal structure. In addition, the content of the first crystal phase and the content of the second crystal phase are adjusted in the oxide layer (30), the dielectric constant of the first crystal phase decreasing with the rise in the temperature of the oxide layer (30) in a temperature range of 25°C to 120°C and the dielectric constant of the second crystal phase increasing with the rise in the temperature of the oxide layer (30) in said temperature range.

Inventors:

SHIMODA TATSUYA (JP)
INOUE SATOSHI (JP)
ARIGA TOMOKI (JP)

Application Number:

PCT/JP2015/069852

Publication Date:

January 28, 2016

Filing Date:

July 10, 2015

Export Citation:

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Assignee:

NAT UNIVERSITY CORP JAPAN ADVANCED INST OF SCIENCE AND TECHNOLOGY (JP)
ADAMANT CO LTD (JP)

International Classes:

C01G33/00; C04B35/00; H01G4/12

Domestic Patent References:

WO2013069470A1	2013-05-16
WO2013069471A1	2013-05-16
WO2011089748A1	2011-07-28

Foreign References:

JP2007051050A

2007-03-01

Other References: