OXIDE FILMS WITH NANODOT FLUX PINNING CENTERS - AMERICAN SUPERCONDUCTOR CORP

Title:

OXIDE FILMS WITH NANODOT FLUX PINNING CENTERS

Document Type and Number:

WIPO Patent Application WO2005081710

Kind Code:

A3

Abstract:

A method for producing a thin film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt. The precursor solution also contains an additive component comprising one or more metal compounds capable of forming a second phase nanoparticle, either alone or in combination with one or more of the precursor components of the precursor solution or a dopant component comprising one or more metal compounds capable of substituting for an element of the rare-earth/alkaline-earth-metal/transition-metal oxide, and treating the precursor film to form an intermediate metal oxyfluoride including the rare earth, the alkaline earth metal, the transition metal and the additive metal or dopant metal of the precursor solution.

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Inventors:

RUPICH MARTIN W (US)
KODENKANDATH THOMAS (US)
ZHANG WEI (US)
LI XIAOPING (US)

Application Number:

PCT/US2004/038025

Publication Date:

June 22, 2006

Filing Date:

November 15, 2004

Export Citation:

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Assignee:

AMERICAN SUPERCONDUCTOR CORP (US)
RUPICH MARTIN W (US)
KODENKANDATH THOMAS (US)
ZHANG WEI (US)
LI XIAOPING (US)

International Classes:

B01J29/00; H01L39/24; (IPC1-7): B05D5/12; H02L39/24

Foreign References:

US6676811B1	2004-01-13
US6624122B1	2003-09-23
US6602588B1	2003-08-05
US6586042B2	2003-07-01
US5897945A	1999-04-27
US5627140A	1997-05-06

Other References: