OXIDE PRECURSOR, OXIDE LAYER, SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE, METHOD FOR PRODUCING OXIDE LAYER, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT - NAT UNIVERSITY CORP JAPAN ADVANCED INST OF SCIENCE AND TECHNOLOGY

Title:

OXIDE PRECURSOR, OXIDE LAYER, SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE, METHOD FOR PRODUCING OXIDE LAYER, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT

Document Type and Number:

WIPO Patent Application WO/2016/098423

Kind Code:

A1

Abstract:

[Problem] To provide an aliphatic polycarbonate, an oxide precursor, and an oxide layer with which stringiness can be controlled when forming, using a printing method, a thin film that can be employed in an electronic device or a semiconductor element. [Solution] This oxide precursor is obtained by dispersing a metal compound, which forms a metal oxide when oxidized, in a solution containing a binder that comprises aliphatic polycarbonates (and may also contain unavoidable impurities), wherein the ratio of aliphatic polycarbonate having a molecular weight of 6,000-400,000, inclusive, to all the aliphatic polycarbonates is 80 mass% or more. As a result, as shown in FIG. 1, a good pattern that can be used in the production of a semiconductor element can be formed.

Inventors:

SHIMODA TATSUYA (JP)
INOUE SATOSHI (JP)
FUKADA KAZUHIRO (JP)
NISHIOKA KIYOSHI (JP)
FUJIMOTO NOBUTAKA (JP)
SUZUKI MASAHIRO (JP)

Application Number:

PCT/JP2015/078158

Publication Date:

June 23, 2016

Filing Date:

October 05, 2015

Export Citation:

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Assignee:

NAT UNIVERSITY CORP JAPAN ADVANCED INST OF SCIENCE AND TECHNOLOGY (JP)
SUMITOMO SEIKA CHEMICALS (JP)

International Classes:

H01L21/368; C23C18/12; H01L21/288; H01L21/316; H01L21/336; H01L29/786

Foreign References:

JP2010010549A	2010-01-14
JP2012169404A	2012-09-06
JP2011119681A	2011-06-16

Other References: