Title:
OXIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/014628
Kind Code:
A1
Abstract:
Disclosed is a technique for suppressing fluctuation of device characteristics in thin film transistors using an oxide semiconductor film as a channel layer. In a thin film transistor using an oxide semiconductor film as a channel layer (4), said channel layer (4) is configured from an oxide semiconductor having as main materials a zinc oxide and tin oxide with introduced group IV elements or group V elements, wherein the ratio (A/B) of the impurity concentration (A) of the group IV elements or group V elements contained in the channel layer (4) and the impurity concentration (B) of the group III elements contained in the channel layer (4) satisfies A/B ≦ 1.0, and ideally A/B ≦ 0.3.
Inventors:
UCHIYAMA, Hiroyuki (HITACHI LTD., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 〒1858601, JP)
内山 博幸 (〒01 東京都国分寺市東恋ヶ窪一丁目２８０番地 株式会社日立製作所 中央研究所内 Tokyo, 〒1858601, JP)
内山 博幸 (〒01 東京都国分寺市東恋ヶ窪一丁目２８０番地 株式会社日立製作所 中央研究所内 Tokyo, 〒1858601, JP)
Application Number:
JP2011/065201
Publication Date:
February 02, 2012
Filing Date:
July 01, 2011
Export Citation:
Assignee:
HITACHI, LTD. (6-6 Marunouchi 1-chome, Chiyoda-ku Tokyo, 80, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
UCHIYAMA, Hiroyuki (HITACHI LTD., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 〒1858601, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
UCHIYAMA, Hiroyuki (HITACHI LTD., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 〒1858601, JP)
International Classes:
H01L29/786; H01L21/363; H01L51/50
Attorney, Agent or Firm:
TSUTSUI, Yamato (Tsutsui & Associates, 3F Shinjuku Gyoen Bldg. 3-10, Shinjuku 2-chome, Shinjuku-k, Tokyo 22, 〒1600022, JP)
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Claims:
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