Title:
OXIDE SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND OXIDE SINTERED BODY
Document Type and Number:
WIPO Patent Application WO/2023/199722
Kind Code:
A1
Abstract:
An objective of the present invention is to provide an oxide semiconductor film capable of enhancing carrier mobility in a thin film transistor and stability relative to ambient temperature. An oxide semiconductor film according to one aspect of the present invention is used in thin film transistors, includes In, Zn, and an element X which is either La or Nd as metal elements. The In, Zn, and X content among all the metal elements is 30 atm％ to 90 atm％ of In, 9 atm％ to 70 atm％ of Zn, and 0.0001 atm％ to 2 atm％ of X.
Inventors:
OCHI MOTOTAKA
TERAMAE YUMI
NISHIYAMA KOHEI
MIYATA KOICHI
TERAMAE YUMI
NISHIYAMA KOHEI
MIYATA KOICHI
Application Number:
PCT/JP2023/011638
Publication Date:
October 19, 2023
Filing Date:
March 23, 2023
Export Citation:
Assignee:
KOBE STEEL LTD (JP)
KOBELCO RES INSTITUTE INC (JP)
KOBELCO RES INSTITUTE INC (JP)
International Classes:
C23C14/34; C23C14/08; H01L21/203; H01L29/786
Domestic Patent References:
| WO2009081885A1 | 2009-07-02 |
Foreign References:
| JP2008243928A | 2008-10-09 | |||
| JP2006134789A | 2006-05-25 | |||
| JP2012151469A | 2012-08-09 |
Attorney, Agent or Firm:
IKEDA Yoshinori (JP)
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