Title:
OXIDE SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/029438
Kind Code:
A1
Abstract:
This oxide semiconductor film is provided on a substrate and includes a plurality of crystal grains. The oxide semiconductor film includes indium (In), and a first metal element selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanide elements. The plurality of crystal grains include a crystal grain boundary that is defined when the crystal orientation difference of two adjacent measurement points, as obtained by an electron backscatter diffraction (EBSD) method, exceeds 5°, and the average KAM value as calculated by the EBSD method is 1.0° or greater. The average value of change in the crystal grain boundary orientation as calculated by the EBSD method may be 40° or less.
Inventors:
WATAKABE HAJIME (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
KAWASHIMA EMI (JP)
TSURUMA YUKI (JP)
SASAKI DAICHI (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
KAWASHIMA EMI (JP)
TSURUMA YUKI (JP)
SASAKI DAICHI (JP)
Application Number:
PCT/JP2023/027497
Publication Date:
February 08, 2024
Filing Date:
July 27, 2023
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
IDEMITSU KOSAN CO (JP)
IDEMITSU KOSAN CO (JP)
International Classes:
H01L29/786; H01L21/20; H01L21/203; H01L21/336
Domestic Patent References:
| WO2018143073A1 | 2018-08-09 |
Foreign References:
| JP2012253315A | 2012-12-20 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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