Title:
OXIDE FOR SEMICONDUCTOR LAYER IN THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2013/180141
Kind Code:
A1
Abstract:
Provided is an oxide for a semiconductor layer, which can keep the field effect mobility thereof at a high level, has a small amount of change in threshold voltages against light, bias stress and the like and has excellent stress resistance when used in a thin-film transistor equipped with an oxide semiconductor layer thin film, and which has excellent resistance to a wet-etching solution that is used in the patterning of source and drain electrodes. The oxide for a semiconductor layer is an oxide used for a semiconductor layer in a thin-film transistor, is composed of In, Zn, Ga, Sn and O, and fulfills the requirements represented by formulae (1) to (4) shown below, wherein [In], [Zn], [Ga] and [Sn] respectively represent the content ratios (at.%) of the metal elements each relative to the total content of all of the metal elements other than oxygen in the oxide.
(1) 1.67×[Zn]+1.67×[Ga] ≥ 100
(2) ([Zn]/0.95)+([Sn]/0.40)+([In]/0.4) ≥ 100
(3) [In] ≤ 40
(4) [Sn] ≥ 5
Inventors:
MORITA SHINYA
HIROSE KENTA
MIKI AYA
KUGIMIYA TOSHIHIRO
HIROSE KENTA
MIKI AYA
KUGIMIYA TOSHIHIRO
Application Number:
PCT/JP2013/064807
Publication Date:
December 05, 2013
Filing Date:
May 28, 2013
Export Citation:
Assignee:
KOBE STEEL LTD (JP)
International Classes:
H01L29/786; H01L21/363
Domestic Patent References:
| WO2011126093A1 | 2011-10-13 |
Foreign References:
| JP2011108873A | 2011-06-02 | |||
| JP2010118407A | 2010-05-27 | |||
| JP2007123699A | 2007-05-17 |
Attorney, Agent or Firm:
UEKI, Kyuichi et al. (JP)
Hisakazu Ueki (JP)
Hisakazu Ueki (JP)
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