Title:
OXIDE FOR SEMICONDUCTOR LAYER AND SPUTTERING TARGET OF THIN FILM TRANSISTOR, AND THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2012/014999
Kind Code:
A1
Abstract:
Provided is an oxide for a semiconductor layer of a thin film transistor, which can impose excellent switching properties to the thin film transistor and can achieve good properties steadily even after the formation of a protective film. This oxide for a semiconductor layer of a thin film transistor is an oxide that can be used in a semiconductor layer of a thin film transistor and contains Zn, Sn and Si.
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Inventors:
MORITA Shinya (())
森田 晋也 (())
MIKI Aya (())
三木 綾 (())
IWANARI Yumi (())
森田 晋也 (())
MIKI Aya (())
三木 綾 (())
IWANARI Yumi (())
Application Number:
JP2011/067332
Publication Date:
February 02, 2012
Filing Date:
July 28, 2011
Export Citation:
Assignee:
KABUSHIKI KAISHA KOBE SEIKO SHO (10-26, Wakinohama-cho 2-chome Chuo-ku, Kobe-sh, Hyogo 85, 〒6518585, JP)
株式会社神戸製鋼所 (〒85 兵庫県神戸市中央区脇浜町二丁目１０番２６号 Hyogo, 〒6518585, JP)
MORITA Shinya (())
森田 晋也 (())
MIKI Aya (())
三木 綾 (())
株式会社神戸製鋼所 (〒85 兵庫県神戸市中央区脇浜町二丁目１０番２６号 Hyogo, 〒6518585, JP)
MORITA Shinya (())
森田 晋也 (())
MIKI Aya (())
三木 綾 (())
International Classes:
H01L29/786; H01L21/363
Attorney, Agent or Firm:
OGURI Shohei et al. (Eikoh Patent Firm, Toranomon East Bldg. 10F 7-13, Nishi-Shimbashi 1-chome, Minato-k, Tokyo 03, 〒1050003, JP)
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Claims: