Title:
OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPATTERING TARGET, AND THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2012/070676
Kind Code:
A1
Abstract:
This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and at least one type of element (X group element) selected from an X group comprising Si, Hf, Ga, Al, Ni, Ge, Ta, W and Nb. The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
Inventors:
MIKI AYA
MORITA SHINYA
KUGIMIYA TOSHIHIRO
YASUNO SATOSHI
MORITA SHINYA
KUGIMIYA TOSHIHIRO
YASUNO SATOSHI
Application Number:
PCT/JP2011/077319
Publication Date:
May 31, 2012
Filing Date:
November 28, 2011
Export Citation:
Assignee:
KOBE STEEL LTD (JP)
MIKI AYA
MORITA SHINYA
KUGIMIYA TOSHIHIRO
YASUNO SATOSHI
MIKI AYA
MORITA SHINYA
KUGIMIYA TOSHIHIRO
YASUNO SATOSHI
International Classes:
H01L29/786; C23C14/08; C23C14/34; G01G19/00; H01L21/363
Domestic Patent References:
| WO2010119952A1 | 2010-10-21 |
Foreign References:
| JP2008243928A | 2008-10-09 | |||
| JP2010118407A | 2010-05-27 | |||
| JP2008277326A | 2008-11-13 |
Attorney, Agent or Firm:
UEKI, Kyuichi et al. (JP)
Hisakazu Ueki (JP)
Hisakazu Ueki (JP)
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Claims: