Title:
OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2012/091126
Kind Code:
A1
Abstract:
This oxide for a semiconductor layer of a thin film transistor contains: In; Zn; and at least one element (group X element) selected from a group formed from Al, Si, Ta, Ti, La, Mg, and Nb. According to the present invention, the switching characteristics and resistance to stress are excellent in a thin-film transistor provided with an In-Zn-O oxide semiconductor that does not contain Ga, and specifically, an oxide for a semiconductor layer of a thin-film transistor that has a small amount of change in the threshold voltage before and after the application of a positive bias stress and superior stability can be provided.
Inventors:
MORITA, Shinya (())
森田 晋也 (())
MIKI, Aya (())
三木 綾 (())
YASUNO, Satoshi (())
森田 晋也 (())
MIKI, Aya (())
三木 綾 (())
YASUNO, Satoshi (())
Application Number:
JP2011/080483
Publication Date:
July 05, 2012
Filing Date:
December 28, 2011
Export Citation:
Assignee:
KABUSHIKI KAISHA KOBE SEIKO SHO (10-26, Wakinohama-cho 2-chome Chuo-ku, Kobe-sh, Hyogo 85, 〒6518585, JP)
株式会社神戸製鋼所 (〒85 兵庫県神戸市中央区脇浜町２丁目１０番２６号 Hyogo, 〒6518585, JP)
MORITA, Shinya (())
森田 晋也 (())
MIKI, Aya (())
三木 綾 (())
株式会社神戸製鋼所 (〒85 兵庫県神戸市中央区脇浜町２丁目１０番２６号 Hyogo, 〒6518585, JP)
MORITA, Shinya (())
森田 晋也 (())
MIKI, Aya (())
三木 綾 (())
International Classes:
H01L29/786; H01L21/336; H01L21/363
Attorney, Agent or Firm:
UEKI, Kyuichi et al. (Fujita-Toyobo Building 9th floor, 1-16 Dojima 2-chome,Kita-ku, Osaka-shi, Osaka 03, 〒5300003, JP)
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Claims:
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