Title:
OXIDE SEMICONDUCTOR, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2023/096425
Kind Code:
A1
Abstract:
An Al-Sb-O-based oxide semiconductor containing aluminum (Al) and antimony (Sb) has excellent electrical conductivity and band gap, such that the semiconductor can be applied to thin film transistors and the like.
Inventors:
HEO SOO WON (KR)
YOON YOUNG JOON (KR)
CHO SUNG BEOM (KR)
CHOI JUN YOUNG (KR)
PARK IN PYO (KR)
KIM HYEON WOO (KR)
YOON HONG-JI (KR)
HWANG MIN NYEONG (KR)
CHOI DA RIM (KR)
HONG JUNG PYO (KR)
PARK JIN SEONG (KR)
KIM HYE MI (KR)
YOON YOUNG JOON (KR)
CHO SUNG BEOM (KR)
CHOI JUN YOUNG (KR)
PARK IN PYO (KR)
KIM HYEON WOO (KR)
YOON HONG-JI (KR)
HWANG MIN NYEONG (KR)
CHOI DA RIM (KR)
HONG JUNG PYO (KR)
PARK JIN SEONG (KR)
KIM HYE MI (KR)
Application Number:
PCT/KR2022/018899
Publication Date:
June 01, 2023
Filing Date:
November 25, 2022
Export Citation:
Assignee:
KOREA INST CERAMIC ENG & TECH (KR)
IUCF HYU (KR)
IUCF HYU (KR)
International Classes:
H01L29/786; H01L21/02
Foreign References:
| JP2013074046A | 2013-04-22 | |||
| KR20200014275A | 2020-02-10 | |||
| KR20190051504A | 2019-05-15 | |||
| KR20180126594A | 2018-11-27 | |||
| KR20120050513A | 2012-05-18 |
Attorney, Agent or Firm:
FIRSTLAW P.C. (KR)
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