Title:
OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, AND SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/107043
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide an oxide semiconductor thin film for which the manufacturing cost is relatively low, and which has high carrier mobility and light stress tolerance when a thin film transistor is formed, and the thin film transistor using this oxide semiconductor thin film. The oxide semiconductor thin film of the present invention contains In, Zn, and Fe, and with respect to the total number of atoms of In, Zn, and Fe, the number of In atoms is 20 atm%-89 atm%, the number of Zn atoms is 10 atm%-79 atm%, and the number of Fe atoms is 0.2 atm%-2 atm%. The present invention includes the thin film transistor having this oxide semiconductor thin film.
Inventors:
TERAMAE YUMI
GOTO HIROSHI
OCHI MOTOTAKA
HINO AYA
GOTO HIROSHI
OCHI MOTOTAKA
HINO AYA
Application Number:
PCT/JP2018/040204
Publication Date:
June 06, 2019
Filing Date:
October 29, 2018
Export Citation:
Assignee:
KOBE STEEL LTD (JP)
International Classes:
H01L21/363; C23C14/08; H01L29/786
Domestic Patent References:
| WO2009081885A1 | 2009-07-02 |
Foreign References:
| JP2010135773A | 2010-06-17 | |||
| JP2016189463A | 2016-11-04 | |||
| JP2004103957A | 2004-04-02 |
Other References:
SUZUKI, YOSUKE ET AL.: "Magnetic properties of diluted magnetic semiconductor IZO thin films doped with Fe", LECTURE PROCEEDINGS OF THE CHEMICAL SOCIETY OF JAPAN, vol. 87, no. 1, 27 March 2007 (2007-03-27), pages 254
Attorney, Agent or Firm:
AMANO Kazunori (JP)
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