Title:
OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2020/024411
Kind Code:
A1
Abstract:
An oxide semiconductor thin-film transistor and a method for manufacturing same. The oxide semiconductor thin-film transistor comprises: a substrate (10), a gate electrode (20) arranged on the substrate (10), a gate insulating layer (30) arranged on the gate electrode (20) and the substrate (10), an oxide semiconductor layer (40) arranged on the gate insulating layer (30), a barrier layer (50) arranged on the oxide semiconductor layer (40), and a source electrode (60) and a drain electrode (70) arranged on the oxide semiconductor layer (40) and the gate insulating layer (30). The oxide semiconductor layer (40) comprises: a channel region (41), and two contact regions (42) respectively located at two sides of the channel region (41), wherein the source electrode (60) and the drain electrode (70) are respectively in contact with the two contact regions (42), and the barrier layer (50) is located on the channel region (41). The channel region (41) comprises multiple channel strips (411) arranged at intervals in the width direction of a channel; and the barrier layer (50) comprises multiple barrier strips (511) respectively correspondingly located on the multiple channel strips (411). The power consumption of the oxide semiconductor thin-film transistor can be reduced, and the stability of the oxide semiconductor thin-film transistor in a bent state can be improved.
Inventors:
ZHANG QIANYI (CN)
Application Number:
PCT/CN2018/107825
Publication Date:
February 06, 2020
Filing Date:
September 27, 2018
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L29/786; H01L27/12
Foreign References:
| CN108496253A | 2018-09-04 | |||
| CN1549349A | 2004-11-24 | |||
| CN102347369A | 2012-02-08 | |||
| CN104916779A | 2015-09-16 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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