Title:
OXIDE SEMICONDUCTOR THIN FILM
Document Type and Number:
WIPO Patent Application WO/2019/098369
Kind Code:
A1
Abstract:
An oxide semiconductor thin film according to an embodiment of the present invention is constituted of an oxide semiconductor containing In, Zn, Ti, and Sn, wherein the atomic ratio of (In+Sn)/(In+Zn+Ti+Sn) is 0.36 to 0.92, the atomic ratio of Sn/(In+Sn) is 0.02 to 0.46, the atomic ratio of Sn/(In+Zn+Ti+Sn) is 0.01 to 0.42, and the atomic ratio of Ti/(In+Zn+Ti+Sn) is 0.01 to 0.10.
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Inventors:
OOTAKE FUMITO (JP)
KOBAYASHI MOTOSHI (JP)
UENO MITSURU (JP)
WADA MASARU (JP)
MATSUMOTO KOUICHI (JP)
KOBAYASHI MOTOSHI (JP)
UENO MITSURU (JP)
WADA MASARU (JP)
MATSUMOTO KOUICHI (JP)
Application Number:
PCT/JP2018/042698
Publication Date:
May 23, 2019
Filing Date:
November 19, 2018
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
H01L21/363; C23C14/08; H01L29/786
Domestic Patent References:
| WO2017099187A1 | 2017-06-15 | |||
| WO2012153507A1 | 2012-11-15 |
Foreign References:
| JP2017112361A | 2017-06-22 | |||
| JP2017195369A | 2017-10-26 | |||
| JP2016111107A | 2016-06-20 |
Attorney, Agent or Firm:
OMORI, Junichi (JP)
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