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Title:
OXIDE SINTERED BODY, METHOD FOR PRODUCING SAME, AND STARTING MATERIAL POWDER FOR PRODUCING OXIDE SINTERED BODY
Document Type and Number:
WIPO Patent Application WO/2010/140548
Kind Code:
A1
Abstract:
Disclosed is an oxide sintered body which is formed from indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by the following formula: InxGayZnzOa (wherein x/(x + y) is 0.2-0.8, z/(x + y + z) is 0.1-0.5, and a = (3/2)x + (3/2)y + z). The oxide sintered body is characterized in that the concentration of volatile impurities contained in the oxide sintered body is not more than 20 ppm. The oxide sintered body is capable of providing a sputtering target that has a higher density and a lower bulk resistance, while suppressing swelling or cracking during the production of the sputtering target. The oxide sintered body can be used for the purpose of producing an IGZO target which enables DC sputtering, while keeping the formation of nodules to a minimum and suppressing abnormal discharge.

Inventors:
IKISAWA MASAKATSU (JP)
YAHAGI MASATAKA (JP)
OSADA KOZO (JP)
KAKENO TAKASHI (JP)
TAKAMI HIDEO (JP)
Application Number:
PCT/JP2010/059101
Publication Date:
December 09, 2010
Filing Date:
May 28, 2010
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
IKISAWA MASAKATSU (JP)
YAHAGI MASATAKA (JP)
OSADA KOZO (JP)
KAKENO TAKASHI (JP)
TAKAMI HIDEO (JP)
International Classes:
C04B35/00; C01G15/00; C04B35/453; C23C14/34; H01L21/203
Foreign References:
JP2007223849A2007-09-06
JPH10182150A1998-07-07
Other References:
MOON, YEON-KEON ET AL.: "Application of DC Magnetron Sputtering to Deposition of InGaZnO Films for Thin Film Transistor Devices", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, 23 March 2009 (2009-03-23)
"Japan Society for the Promotion of Science", TOMEI SANKABUTSU HIKARI DENSHI ZAIRYO DAI 166 IINKAI, 20 December 2006 (2006-12-20), pages 235 - 236
Attorney, Agent or Firm:
OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)
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