Title:
OXIDE SINTERED BODY, METHOD FOR PRODUCING SAME, AND OXIDE TRANSPARENT CONDUCTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2013/042747
Kind Code:
A1
Abstract:
[Problem] To provide a crystalline transparent conductive film having a high transmittance of at least 98% in the visible wavelengths (400-800 nm) and a specific resistance of no greater than 5×10-3 Ω·cm, even resulting from film formation at a low substrate temperature of no greater than 150°C. [Solution] The transparent conductive film is obtained by means of film formation with the sputtering target being an oxide sintered body such that Sn/In is 0.019-0.102, In/(In+Sn+Co) is 0.771-0.967, Sn/(In+Sn+Co) is 0.016-0.091, Co/(In+Sn+Co) is 0.015-0.15, the relative density is at least 98%, and the specific resistance is no greater than 5×10-3 Ω·cm.
Inventors:
KUWAHARA MASAKAZU (JP)
Application Number:
PCT/JP2012/074111
Publication Date:
March 28, 2013
Filing Date:
September 20, 2012
Export Citation:
Assignee:
SUMITOMO METAL MINING CO (JP)
International Classes:
C04B35/00; C23C14/08; C23C14/34; H01B5/14; H01B13/00
Foreign References:
| JPH09161542A | 1997-06-20 | |||
| JPH10269843A | 1998-10-09 | |||
| JPH11322413A | 1999-11-24 |
Other References:
EDITED BY JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE: "The 166th Committee on Photonic and Electronic Oxide", TOMEI DODENMAKU NO GIJUTSU, 1ST EDITION, OHMSHA, LTD., 30 March 1999 (1999-03-30), pages 196 - 201
JOLANTA STANKIEWICZ: "Magnetic behavior of sputtered Co-doped indium-tin oxide films", PHYSICAL REVIEW B, vol. 75, no. 23, 2007, pages 235308-1 - 235308-6, XP003030958
JOLANTA STANKIEWICZ: "Magnetic behavior of sputtered Co-doped indium-tin oxide films", PHYSICAL REVIEW B, vol. 75, no. 23, 2007, pages 235308-1 - 235308-6, XP003030958
Attorney, Agent or Firm:
Kiwa International (JP)
Patent business corporation Takakazu patent firm (JP)
Patent business corporation Takakazu patent firm (JP)
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Claims: