Title:
OXIDE SINTERED BODY, METHOD FOR PRODUCING SAME, SPUTTERING TARGET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/047152
Kind Code:
A1
Abstract:
Provided is an oxide sintered body containing indium, tungsten and zinc, which contains a first crystal phase that is a main component of the oxide sintered body and contains a bixbyite crystal phase and a second crystal phase that has a higher zinc content than the first crystal phase, and wherein the particles constituting the second crystal phase have an average major axis length of from 3 μm to 50 μm (inclusive) and an average aspect ratio of from 4 to 50 (inclusive).
Inventors:
MIYANAGA MIKI (JP)
WATATANI KENICHI (JP)
AWATA HIDEAKI (JP)
WATATANI KENICHI (JP)
AWATA HIDEAKI (JP)
Application Number:
PCT/JP2016/063646
Publication Date:
March 23, 2017
Filing Date:
May 06, 2016
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C04B35/00; C23C14/08; C23C14/34; H01L21/363; H01L29/786
Domestic Patent References:
| WO2014058019A1 | 2014-04-17 |
Foreign References:
| JP2015107907A | 2015-06-11 | |||
| JP2005314131A | 2005-11-10 | |||
| JP2014214359A | 2014-11-17 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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