Title:
OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME, SPUTTER TARGET, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/150622
Kind Code:
A1
Abstract:
Provided is an oxide sintered body containing In, W and Zn, further containing a first crystal phase which contains a bixbyite-type phase and a second crystal phase which has a higher Zn content ratio than the first crystal phase. The particles constituting the second crystal phase have an average major axis length of 3-50μm and an average aspect ratio of 1.5-50. In the oxide sintered body: the bulk density is greater than 6.4 g/cm3 but less than 7.5g/cm3; with respect to the total content of In, W and Zn, the W content ratio is greater than 0.01 atom% but less than 5.0 atom%, and the Zn content ratio is equal to 1.2 atom% or more and less than 50 atom%; the atomic ratio of Zn/W is greater than 1.0 and smaller than 20000. Further provided are a method for producing the oxide sintered body and a method for producing a semiconductor device 10 containing an oxide semiconductor film 14 formed using the oxide sintered body.
Inventors:
MIYANAGA MIKI (JP)
WATATANI KENICHI (JP)
AWATA HIDEAKI (JP)
WATATANI KENICHI (JP)
AWATA HIDEAKI (JP)
Application Number:
PCT/JP2017/035304
Publication Date:
August 23, 2018
Filing Date:
September 28, 2017
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C04B35/01; C23C14/08; C23C14/34; H01L21/363; H01L29/786
Domestic Patent References:
| WO2016129146A1 | 2016-08-18 |
Foreign References:
| JP2015193525A | 2015-11-05 | |||
| JP2015107907A | 2015-06-11 | |||
| JP2017057109A | 2017-03-23 | |||
| JP2017057108A | 2017-03-23 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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