Title:
OXIDE SINTERED BODY AND THIN FILM TRANSISTOR INCLUDING SAME
Document Type and Number:
WIPO Patent Application WO/2023/195761
Kind Code:
A1
Abstract:
The present invention relates to an oxide sintered body including In element, Zn element, Ga element, and oxygen and a thin film transistor including same, wherein the atomic ratio of In element to Zn element is 1 - 2:1, the atomic ratio of In element to Ga element is 3 - 6:1, and the atomic ratio of Zn element to Ga element is 3 - 6:1.
Inventors:
KIM SANG HUI (KR)
PARK CHANG WOO (KR)
PARK CHANG WOO (KR)
Application Number:
PCT/KR2023/004572
Publication Date:
October 12, 2023
Filing Date:
April 05, 2023
Export Citation:
Assignee:
ADVANCED NANO PRODUCTS CO LTD (KR)
International Classes:
H01L29/786; C04B35/453
Foreign References:
| JP2020123612A | 2020-08-13 | |||
| JP2020080413A | 2020-05-28 | |||
| JP2018201041A | 2018-12-20 | |||
| JP2006165528A | 2006-06-22 | |||
| KR20210013751A | 2021-02-05 | |||
| KR102486098B1 | 2023-01-09 |
Attorney, Agent or Firm:
KIM, Sung Ho (KR)
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