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Patent Searching and Data


Title:
OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING OXIDE SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/155577
Kind Code:
A1
Abstract:
This oxide sputtering target is formed of an oxide containing zirconium, silicon, and indium as metal components, and is characterized in that, in a target plane, the difference between the maximum and minimum oxygen concentrations as a percentage of the total of the maximum and the minimum oxygen concentrations is 15% or less.

Inventors:
NONAKA Sohei (Central Research Institute 1002-14, Mukohyama, Naka-sh, Ibaraki 02, 〒3110102, JP)
MORI Rie (SANDA PLANT 12-6, Technopark, Sanda-sh, Hyogo 39, 〒6691339, JP)
NAGAO Masayoshi (Saitama Office 297, Kitabukuro-cho 1-chome, Omiya-ku, Saitama-sh, Saitama 08, 〒3308508, JP)
Application Number:
JP2018/004430
Publication Date:
August 15, 2019
Filing Date:
February 08, 2018
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORPORATION (2-3 Marunouchi 3-chome, Chiyoda-ku Tokyo, 17, 〒1008117, JP)
International Classes:
C23C14/34; G11B7/26
Domestic Patent References:
WO2014156234A12014-10-02
WO2009116213A12009-09-24
Foreign References:
JP5061802B22012-10-31
JP2013151390A2013-08-08
JPH11302835A1999-11-02
JP2018040032A2018-03-15
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (1-9-2, Marunouchi Chiyoda-k, Tokyo 20, 〒1006620, JP)
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