Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING OXIDE SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/155577
Kind Code:
A1
Abstract:
This oxide sputtering target is formed of an oxide containing zirconium, silicon, and indium as metal components, and is characterized in that, in a target plane, the difference between the maximum and minimum oxygen concentrations as a percentage of the total of the maximum and the minimum oxygen concentrations is 15% or less.

Inventors:
NONAKA SOHEI (JP)
MORI RIE (JP)
NAGAO MASAYOSHI (JP)
Application Number:
PCT/JP2018/004430
Publication Date:
August 15, 2019
Filing Date:
February 08, 2018
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; G11B7/26
Domestic Patent References:
WO2014156234A12014-10-02
WO2009116213A12009-09-24
Foreign References:
JP5061802B22012-10-31
JP2013151390A2013-08-08
JPH11302835A1999-11-02
JP2018040032A2018-03-15
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: METHOD FOR IMPROVING RESULT OF MONOCLONAL ANTIBODY DETECTION

Next Patent: WIRELESS BASE STATION, WIRELESS TERMINAL, WIRELESS COMMUNICATION SYSTEM, AND TRANSMISSION POWER CONT...