Title:
OXIDE SUPERCONDUCTIVE THIN-FILM, PROCESS FOR PRODUCING THE SAME AND SUPERCONDUCTING FAULT CURRENT LIMITER
Document Type and Number:
WIPO Patent Application WO/2003/091158
Kind Code:
A1
Abstract:
A process for forming an oxide superconductive thin-film of high critical current density and large critical current characteristics having a thickness of more than 0.7 μm on a substrate including a sapphire single-crystal substrate by the use of laser deposition technique wherein a target is irradiated with laser beams and the matter scattered from the target thereby is deposited on the substrate; the oxide superconductive thin-film produced by the process; and a superconducting fault current limiter including the oxide superconductive thin-film.
Inventors:
HAHAKURA SHUJI (JP)
OHMATSU KAZUYA (JP)
OHMATSU KAZUYA (JP)
Application Number:
PCT/JP2003/004933
Publication Date:
November 06, 2003
Filing Date:
April 17, 2003
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
HAHAKURA SHUJI (JP)
OHMATSU KAZUYA (JP)
HAHAKURA SHUJI (JP)
OHMATSU KAZUYA (JP)
International Classes:
C01G1/00; C01G3/00; C23C14/08; C23C14/28; H01B12/06; H01B13/00; H01L39/16; H01L39/24; C01B13/14; (IPC1-7): C01G1/00; C01G3/00; C23C14/08; C23C14/28; H01L39/24; H01B12/06; H01B13/00
Foreign References:
| JPH06132571A | 1994-05-13 | |||
| JPH04212214A | 1992-08-03 |
Attorney, Agent or Firm:
Nakano, Minoru c/o Sumitomo Electric Industries Ltd. (1-3, Shimaya 1-chome, Konohana-k, Osaka-shi Osaka, JP)
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