Title:
OXIDE HIGH−TEMPERATURE SUPERCONDUCTOR AND ITS PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2003/023094
Kind Code:
A1
Abstract:
An oxide high−temperature superconductor in which an oxide high−temperature superconductive thin film high in crystal perfection and excellent in crystal orientation is formed on a crystal substrate of low dielectric constant and its production method are disclosed. When an oxide high−temperature superconductor in which an oxide high−temperature superconductive thin film containing Ba as a constituent element is formed on a sapphire R−face (1, −1, 0, 2) substrate is produced, a first buffer layer made of CeO3 for relaxing the lattice mismatching between the sapphire R−face (1, −1, 0, 2) substrate and the oxide high−temperature superconductive thin film is formed on the the sapphire R−face (1, −1, 0, 2) substrate, a second buffer layer in which Ba of the oxide high−temperature superconductor is replaced with Sr is formed on the first buffer layer, and an oxide high−temperature superconductive thin film is epitaxially grown on the second buffer layer. Even if the material of the firt buffer layer for relaxing the lattice mismatching of the oxide high−temperature superconductive thin film tends to cause an interface reaction with Ba in the oxide high−temperature superconductive thin film, the second buffer layer prevents the interface reaction, thereby epitaxially growing an oxide high−temperature superconductive thin film excellent in crystal perfection and crystal orientation.
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Inventors:
ATHINARAYANAN SUNDARESAN (JP)
IHARA HIDEO DI
IHARA HIDEO DI
Application Number:
PCT/JP2002/009049
Publication Date:
March 20, 2003
Filing Date:
September 05, 2002
Export Citation:
Assignee:
JAPAN SCIENCE & TECH CORP (JP)
ATHINARAYANAN SUNDARESAN (JP)
IHARA YOSHIKO HF (JP)
IHARA HIDEYO HF (JP)
IHARA HIDETAKA HM (JP)
IHARA GEN EI HM (JP)
IHARA CHIAKI HF (JP)
ATHINARAYANAN SUNDARESAN (JP)
IHARA YOSHIKO HF (JP)
IHARA HIDEYO HF (JP)
IHARA HIDETAKA HM (JP)
IHARA GEN EI HM (JP)
IHARA CHIAKI HF (JP)
International Classes:
C30B23/02; H01L39/24; (IPC1-7): C30B29/22
Foreign References:
JPH01286920A | 1989-11-17 | |||
EP0949690A2 | 1999-10-13 | |||
EP0884787A2 | 1998-12-16 |
Other References:
O'CONNOR J.D. ET AL.: "Low-temperature processing of superconducting Tl2Ba2Ca1Cu2Ox films on CeO2 buffered sapphire", APPLIED PHYSICS LETTERS, vol. 69, no. 1, 1 July 1996 (1996-07-01), pages 115 - 117, XP002966813
KHAN NAWAZISH A. ET AL.: "Superconducting properties of Cu1-xTlxBa2Ca3Cu4O12-y thin films", SUPERCONDUCTOR SCIENCE AND TECHNOLOGY, vol. 14, no. 8, August 2001 (2001-08-01), pages 603 - 606, XP002966814
See also references of EP 1443131A4
KHAN NAWAZISH A. ET AL.: "Superconducting properties of Cu1-xTlxBa2Ca3Cu4O12-y thin films", SUPERCONDUCTOR SCIENCE AND TECHNOLOGY, vol. 14, no. 8, August 2001 (2001-08-01), pages 603 - 606, XP002966814
See also references of EP 1443131A4
Attorney, Agent or Firm:
Hirayama, Kazuyuki (Shinjukugyoen Bldg. 2-3-10, Shinjuk, Shinjuku-ku Tokyo, JP)
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