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Title:
OXIDE HIGH−TEMPERATURE SUPERCONDUCTOR AND ITS PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2003/023094
Kind Code:
A1
Abstract:
An oxide high−temperature superconductor in which an oxide high−temperature superconductive thin film high in crystal perfection and excellent in crystal orientation is formed on a crystal substrate of low dielectric constant and its production method are disclosed. When an oxide high−temperature superconductor in which an oxide high−temperature superconductive thin film containing Ba as a constituent element is formed on a sapphire R−face (1, −1, 0, 2) substrate is produced, a first buffer layer made of CeO3 for relaxing the lattice mismatching between the sapphire R−face (1, −1, 0, 2) substrate and the oxide high−temperature superconductive thin film is formed on the the sapphire R−face (1, −1, 0, 2) substrate, a second buffer layer in which Ba of the oxide high−temperature superconductor is replaced with Sr is formed on the first buffer layer, and an oxide high−temperature superconductive thin film is epitaxially grown on the second buffer layer. Even if the material of the firt buffer layer for relaxing the lattice mismatching of the oxide high−temperature superconductive thin film tends to cause an interface reaction with Ba in the oxide high−temperature superconductive thin film, the second buffer layer prevents the interface reaction, thereby epitaxially growing an oxide high−temperature superconductive thin film excellent in crystal perfection and crystal orientation.

Inventors:
ATHINARAYANAN SUNDARESAN (JP)
IHARA HIDEO DI
Application Number:
PCT/JP2002/009049
Publication Date:
March 20, 2003
Filing Date:
September 05, 2002
Export Citation:
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Assignee:
JAPAN SCIENCE & TECH CORP (JP)
ATHINARAYANAN SUNDARESAN (JP)
IHARA YOSHIKO HF (JP)
IHARA HIDEYO HF (JP)
IHARA HIDETAKA HM (JP)
IHARA GEN EI HM (JP)
IHARA CHIAKI HF (JP)
International Classes:
C30B23/02; H01L39/24; (IPC1-7): C30B29/22
Foreign References:
JPH01286920A1989-11-17
EP0949690A21999-10-13
EP0884787A21998-12-16
Other References:
O'CONNOR J.D. ET AL.: "Low-temperature processing of superconducting Tl2Ba2Ca1Cu2Ox films on CeO2 buffered sapphire", APPLIED PHYSICS LETTERS, vol. 69, no. 1, 1 July 1996 (1996-07-01), pages 115 - 117, XP002966813
KHAN NAWAZISH A. ET AL.: "Superconducting properties of Cu1-xTlxBa2Ca3Cu4O12-y thin films", SUPERCONDUCTOR SCIENCE AND TECHNOLOGY, vol. 14, no. 8, August 2001 (2001-08-01), pages 603 - 606, XP002966814
See also references of EP 1443131A4
Attorney, Agent or Firm:
Hirayama, Kazuyuki (Shinjukugyoen Bldg. 2-3-10, Shinjuk, Shinjuku-ku Tokyo, JP)
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