Title:
OXIDE THIN FILM ELEMENT, AND PRODUCTION METHOD AND PRODUCTION DEVICE THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/052535
Kind Code:
A1
Abstract:
Provided are: a production method in which a low-temperature printing process is used to produce a metal oxide thin film element which serves as a conductive layer or a semiconductor layer; a production device; and an oxide thin film element produced therewith. In this method for producing an oxide thin film element of a conductor or a semiconductor comprising a metal oxide, a step in which a coating film, which is formed by applying a coating of a solution including a metal compound serving as a precursor of the metal oxide, is irradiated with ultraviolet light under a gas atmosphere, and a step in which the coating film is pressurized at a pressure equal to or greater than normal pressure are simultaneously or sequentially performed. As a result, an oxide thin film element of a conductor or a semiconductor can be formed on a flexible substrate.
Inventors:
KOZASA TAKEHITO (JP)
YOSHIDA MANABU (JP)
HOSHINO SATOSHI (JP)
YOSHIDA MANABU (JP)
HOSHINO SATOSHI (JP)
Application Number:
PCT/JP2015/077575
Publication Date:
April 07, 2016
Filing Date:
September 29, 2015
Export Citation:
Assignee:
NAT INST OF ADVANCED IND SCIEN (JP)
International Classes:
H01L21/368; H01L21/336; H01L29/786; H01L29/861; H01L29/868
Domestic Patent References:
| WO2011055856A1 | 2011-05-12 |
Foreign References:
| JP2004075511A | 2004-03-11 | |||
| JPH1149507A | 1999-02-23 | |||
| JP2011046566A | 2011-03-10 | |||
| JP2007042572A | 2007-02-15 |
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