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Title:
OXYGEN CONCENTRATION EVALUATION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/171880
Kind Code:
A1
Abstract:
The present invention provides an oxygen concentration evaluation method for evaluating the concentration of oxygen in a silicon single crystal by a PL method or a CL method, wherein the silicon single crystal is irradiated with electron beam or an ion beam other than carbon ion beam or oxygen ion beam at a predetermined radiation level to measure the intensity of C line and the intensity of G line at a predetermined temperature, then the ratio of the intensity of C line to the intensity of G line (i.e., (Ci-Oi intensity)/(Ci-Cs intensity)) is determined, and then the concentration of oxygen [Oi] is evaluated by assigning the intensity ratio (Ci-Oi intensity)/(Ci-Cs intensity) and the concentration of carbon [Cs] in the silicon single crystal to the equation: [Oi] = α·(Ci-Oi intensity)/(Ci-Cs intensity) ·[Cs] (wherein α represents a proportional constant). Thus, a method for evaluating the concentration of oxygen in a silicon single crystal with high sensitivity can be provided.

Inventors:
KUBONO Ippei (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
KIMURA Akihiro (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
Application Number:
JP2019/004687
Publication Date:
September 12, 2019
Filing Date:
February 08, 2019
Export Citation:
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Assignee:
SHIN-ETSU HANDOTAI CO., LTD. (2-1 Ohtemachi 2-chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
International Classes:
H01L21/66; C30B29/06; G01N21/62
Foreign References:
JP2015101529A2015-06-04
JP2014199253A2014-10-23
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (1st Shitaya Bldg. 8F, 6-11 Ueno 7-chome, Taito-k, Tokyo 05, 〒1100005, JP)
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