Title:
P-TYPE SEMICONDUCTOR COMPRISING MAGNESIUM, SILICON, TIN, AND GERMANIUM, AND PROCESS FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2015/012113
Kind Code:
A1
Abstract:
[Problem] To produce a p-type semiconductor by sintering a material represented by the general chemical formula Mg2SiXSnYGeZ (wherein X+Y+Z=1, X≥0, Y≥0, and Z≥0). [Solution] X is in the range of 0.00≤X≤0.25, and Z satisfies the relationships -1.00X+0.40≥Z≥-2.00X+0.10 and Z>0.00. Y is in the range of 0.60≤Y≤0.95, and Z satisfies either the relationships -1.00Y+1.00≥Z≥-1.00Y+0.75 and Z>0.00, provided that 0.60≤Y≤0.90, or the relationships -2.00Y+1.90≥Z≥-1.00Y+0.75 and Z>0.00, provided that 0.90≤Y≤0.95.
Inventors:
ISODA YUKIHIRO (JP)
TADA SATOKI (JP)
FUJIU HIROFUMI (JP)
TADA SATOKI (JP)
FUJIU HIROFUMI (JP)
Application Number:
PCT/JP2014/068401
Publication Date:
January 29, 2015
Filing Date:
July 10, 2014
Export Citation:
Assignee:
NAT INST FOR MATERIALS SCIENCE (JP)
MITSUBA CORP (JP)
MITSUBA CORP (JP)
International Classes:
H01L35/14; B22F3/14; C01B33/06; C22C23/00; H01L35/34
Foreign References:
| JP2009188368A | 2009-08-20 | |||
| JP2008160077A | 2008-07-10 | |||
| JP2010037641A | 2010-02-18 |
Other References:
GUANGYU JIANG ET AL.: "Improving p-type thermoelectric performance of Mg2(Ge,Sn) compounds via solid solution and Ag doping", INTERMETALLICS, vol. 32, January 2013 (2013-01-01), pages 312 - 317, XP055310989
FEDOROV, M.I ET AL.: "Transport properties of Mg2X0.4Sn0.6 solid solutions (X=Si,Ge) with p-type conductivity", PHYSICS OF THE SOLID STATE, vol. 48, no. 8, 2006, pages 1486 - 1490, XP019412662
A.U. KHAN ET AL.: "High thermoelectric figure of merit of Mg2Si0.55Sn0.4Ge0.05 materials doped with Bi and Sb", SCRIPTA MATERIALIA, vol. 69, no. 8, 16 July 2013 (2013-07-16), pages 606 - 609, XP028696495
M. AKASAKA ET AL., J. APPL. PHYS., vol. 104, 2008, pages 013703
H. LHOU-MOUKO ET AL., J. ALLOYS COMPD., vol. 509, 2011, pages 6503 - 6508
See also references of EP 3026718A4
FEDOROV, M.I ET AL.: "Transport properties of Mg2X0.4Sn0.6 solid solutions (X=Si,Ge) with p-type conductivity", PHYSICS OF THE SOLID STATE, vol. 48, no. 8, 2006, pages 1486 - 1490, XP019412662
A.U. KHAN ET AL.: "High thermoelectric figure of merit of Mg2Si0.55Sn0.4Ge0.05 materials doped with Bi and Sb", SCRIPTA MATERIALIA, vol. 69, no. 8, 16 July 2013 (2013-07-16), pages 606 - 609, XP028696495
M. AKASAKA ET AL., J. APPL. PHYS., vol. 104, 2008, pages 013703
H. LHOU-MOUKO ET AL., J. ALLOYS COMPD., vol. 509, 2011, pages 6503 - 6508
See also references of EP 3026718A4
Attorney, Agent or Firm:
HIROSE TETSUO (JP)
Tetsuo Hirose (JP)
Tetsuo Hirose (JP)
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