POLYCRYSTALLINE MgO VAPOR DEPOSITION MATERIAL - MITSUBISHI MATERIALS CORPORATION

Title:

POLYCRYSTALLINE MgO VAPOR DEPOSITION MATERIAL

Document Type and Number:

WIPO Patent Application WO/2004/033749

Kind Code:

A1

Abstract:

A polycrystalline MgO vapor deposition material for a protective film of a plasma display panel, which comprises a sintered pellet of a polycrystalline MgO having a MgO purity of 99.9 % or more and a relative density of 90 % or more, wherein the polycrystalline MgO contains Si in an concentration of 30 ppm or more and less than 500 ppm. The MgO vapor deposition material can be used for manufacturing a plasma display panel exhibiting good discharge response over a wide range of temperature and improved panel brightness or a plasma display panel having a greatly reduced number of address IC’s with no decrease in panel brightness.

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Inventors:

Sakurai, Hideaki c/o Mitsubishi Materials Corporation (Central Research Institute Naka Research Center, 1002-14, Mukaiyama, Naka-ch, Naka-gun Ibaraki, 311-0102, JP)
Toyoguchi, Ginjiro c/o Mitsubishi Materials Corporation (Central Research Institute Naka Research Center, 1002-14, Mukaiyama, Naka-ch, Naka-gun Ibaraki, 311-0102, JP)
Kuromitsu, Yoshiro c/o Mitsubishi Materials Corporation (Central Research Institute Naka Research Center, 1002-14, Mukaiyama, Naka-ch, Naka-gun Ibaraki, 311-0102, JP)
Park, Eung-chul c/o LG Electronics Inc. (20 Yoido-don, Youngdungpo-gu 150-721 Seoul, KR)

Application Number:

PCT/JP2003/012976

Publication Date:

April 22, 2004

Filing Date:

October 09, 2003

Export Citation:

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Assignee:

MITSUBISHI MATERIALS CORPORATION (5-1 Otemachi 1-chome, Chiyoda-ku, Tokyo, 100-8117, JP)
LG ELECTRONICS INC. (20 Yoido-dong, Youngdungpo-gu, 150-721 Seoul, KR)

International Classes:

C04B35/053; C23C14/08; C23C14/24; H01J11/02; H01J17/04; H01J17/49; (IPC1-7): C23C14/24; H01J11/02

Attorney, Agent or Firm:

Shiga, Masatake (2-3-1, Yaesu Chuo-ku, Tokyo, 104-8453, JP)

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