Title:
PROCESS FOR PRODUCING AlN CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2008/029827
Kind Code:
A1
Abstract:
A novel process for producing an AlN crystal. The process for AlN crystal production
comprises bringing a seed crystal (4) into contact with molten aluminum (2) located
in a nitrogenous atmosphere, supplying to the interface between the seed crystal
(4) and the molten aluminum (2) an element having a smaller free energy concerning
nitride formation than aluminum (e.g., boron, calcium, or silicon), and reacting
nitrogen dissolved in the molten aluminum (2) with the molten aluminum (2) using
that element as a catalyst to grow an AlN crystal on the seed crystal (4). The nitrogenous
atmosphere is preferably regulated so as to have a pressure of 4 atm or higher.
The temperature of the interface between the molten aluminum (2) and the seed
crystal (4) is preferably regulated to 800°C or higher. The element serving
as a catalyst may be supplied to the interface between the seed crystal (4) and
the molten aluminum (2) by incorporating the gas of a compound containing the
element serving as a catalyst into the nitrogenous atmosphere and dissolving
this gas in the molten aluminum (2).
Inventors:
OTSUKA, Kanji (2-1074-38, Kohan Higashiyamato-sh, Tokyo 02, 2070002, JP)
大塚 寛治 (〒02 東京都東大和市湖畔２－１０７４－３８ Tokyo, 2070002, JP)
SEIMIYA, Yoshihiro (School of Science and Engineering 2-1-1, Hodokubo, Hino-sh, Tokyo 06, 1918506, JP)
清宮 義博 (〒06 東京都日野市程久保２－１－１ 明星大学 理工学部内 Tokyo, 1918506, JP)
大塚 寛治 (〒02 東京都東大和市湖畔２－１０７４－３８ Tokyo, 2070002, JP)
SEIMIYA, Yoshihiro (School of Science and Engineering 2-1-1, Hodokubo, Hino-sh, Tokyo 06, 1918506, JP)
清宮 義博 (〒06 東京都日野市程久保２－１－１ 明星大学 理工学部内 Tokyo, 1918506, JP)
Application Number:
JP2007/067265
Publication Date:
March 13, 2008
Filing Date:
September 05, 2007
Export Citation:
Assignee:
TAMA-TLO LTD. (HACHIOJI SQUARE BLDG. 11F, 9-1 ASAHI-CHO HACHIOJI-SH, Tokyo 83, 1920083, JP)
タマティーエルオー株式会社 (〒83 東京都八王子市旭町９番１号 八王子スクエアビル１１階 Tokyo, 1920083, JP)
OTSUKA, Kanji (2-1074-38, Kohan Higashiyamato-sh, Tokyo 02, 2070002, JP)
大塚 寛治 (〒02 東京都東大和市湖畔２－１０７４－３８ Tokyo, 2070002, JP)
SEIMIYA, Yoshihiro (School of Science and Engineering 2-1-1, Hodokubo, Hino-sh, Tokyo 06, 1918506, JP)
タマティーエルオー株式会社 (〒83 東京都八王子市旭町９番１号 八王子スクエアビル１１階 Tokyo, 1920083, JP)
OTSUKA, Kanji (2-1074-38, Kohan Higashiyamato-sh, Tokyo 02, 2070002, JP)
大塚 寛治 (〒02 東京都東大和市湖畔２－１０７４－３８ Tokyo, 2070002, JP)
SEIMIYA, Yoshihiro (School of Science and Engineering 2-1-1, Hodokubo, Hino-sh, Tokyo 06, 1918506, JP)
International Classes:
C30B29/38; C01B21/072; C30B15/02; C30B29/10; C01B21/00; C30B15/02
Attorney, Agent or Firm:
YANASE, Mutsuyasu et al. (PATENT ATTORNEYS SHINPO, 8th Floor UK Building, 1-32-14, Takadanobaba, Shinjuku-k, Tokyo 75, 1690075, JP)
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