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Patent Searching and Data


Title:
PARALLEL DRIVE CIRCUIT FOR POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/085984
Kind Code:
A1
Abstract:
A parallel drive circuit for a power semiconductor device, comprising a signal isolation and drive control unit uniquely connected to an upper computer control signal interface, a drive isolation power supply unit uniquely connected to a power supply interface, N signal decoupling units connected to the signal isolation and drive control unit, N power supply decoupling units connected to the drive isolation power supply unit, and N drive units correspondingly connected to each pair of decoupling units. Compared with parallel drive circuits provided in the prior art, the parallel drive circuit provided in the present application reduces the costs, the volume, and the complexity of a drive circuit and a main circuit, and ensures the consistency between gate voltage amplitudes and time sequences of parallel power semiconductor devices, thereby effectively improving the dynamic/static current sharing level of the parallel power semiconductor devices.

Inventors:
XIE SHUNMENG (CN)
XIN LI (CN)
ZHANG DONGHUI (CN)
LI YANYONG (CN)
ZHU WU (CN)
YANG TAO (CN)
YANG LELE (CN)
WEI HAISHAN (CN)
OUYANG LIU (CN)
MA LONGCHANG (CN)
Application Number:
PCT/CN2018/113605
Publication Date:
May 09, 2019
Filing Date:
November 02, 2018
Export Citation:
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Assignee:
CRRC ZHUZHOU ELECTRIC LOCOMOTIVE RES INSTITUTE CO LTD (CN)
International Classes:
H02M1/088
Foreign References:
CN106100298A2016-11-09
CN204304771U2015-04-29
CN103199678A2013-07-10
CN101217250A2008-07-09
JPH0767320A1995-03-10
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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