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Patent Searching and Data


Title:
PARALLEL DRIVE CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2017/221292
Kind Code:
A1
Abstract:
A parallel drive circuit (50) has a first semiconductor switch element (1) and a second semiconductor switch element (2). A first drain terminal (1b) of the first semiconductor switch element (1) is connected in parallel to a second drain terminal (2b) of the second semiconductor switch element (2), and a first source terminal (1c) of the first semiconductor switch element (1) is connected in parallel to a second source terminal (2c) of the second semiconductor switch element (2). A first on-resistance, i.e., a resistance of the first semiconductor switch element (1) in the on-state, increases when the temperature of the first semiconductor switch element (1) increases, and a second on-resistance, i.e., a resistance of the second semiconductor switch element (2) in the on-state, increases when the temperature of the second semiconductor switch element (2) increases.

Inventors:
NISHIO NAOKI (JP)
Application Number:
PCT/JP2016/068237
Publication Date:
December 28, 2017
Filing Date:
June 20, 2016
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03K17/12; H03K17/687
Foreign References:
JP2014053881A2014-03-20
JPH04351113A1992-12-04
JPS59127857A1984-07-23
JP2009135626A2009-06-18
Attorney, Agent or Firm:
TAKAMURA, Jun (JP)
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