PARAMETER DETERMINING METHOD AND DEVICE FOR GATE DRIVE RESISTOR OF SWITCHING TRANSISTOR, AND CIRCUIT

WIPO Patent Application WO/2023/193561

A1

Disclosed in the present disclosure are a parameter determining method and device for a gate drive resistor of a switching transistor, and a circuit. The method comprises: inputting obtained total turn-on time and turn-on drive voltage into a first turn-on gate resistance model to obtain a turn-on resistance upper limit of the gate drive resistor, inputting obtained maximum bus voltage and phase voltage change rate into a second turn-on gate resistance model to obtain a turn-on resistance lower limit of the gate drive resistor, and inputting the maximum bus voltage and the phase voltage change rate into a turn-off gate resistance model to obtain a turn-off resistance lower limit of the gate drive resistor; and determining a turn-on resistance interval of the gate drive resistor according to the turn-on resistance upper limit and the turn-off resistance lower limit, determining a turn-off resistance interval of the gate drive resistor according to the turn-on resistance upper limit and the turn-off resistance lower limit, and then accurately determining the resistance of the gate drive resistor by means of the turn-on resistance interval and the turn-off resistance interval.

SHI HONGKANG (CN)
QIN FEIXIANG (CN)
LI JUNLONG (CN)

PCT/CN2023/079884

October 12, 2023

March 06, 2023

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ANHUI WELLING AUTO PARTS CORPORATION LTD (CN)
GUANGDONG WELLING AUTO PARTS CORPORATION LTD (CN)

H02M1/088

WO2021085316A1

2021-05-06

CN114614655A	2022-06-10
CN114019241A	2022-02-08
CN203574623U	2014-04-30
CN110224688A	2019-09-10

BEIJING LISENG INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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