PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, MONOMER FOR MANUFACTURING RESIN FOR SEMICONDUCTOR DEVICE MANUFACTURING PROCESS, RESIN, METHOD FOR MANUFACTURING RESIN, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM

Title:

Document Type and Number:

WIPO Patent Application WO/2017/110290

Kind Code:

A1

Abstract:

Provided are: a pattern formation method provided with a film formation step for forming a film through use of a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101: 1998 using formazin as the reference material and an integrating sphere measurement system as the measurement system, the pattern formation method whereby scum defect performance can be markedly enhanced particularly in formation of an ultrafine pattern (e.g., a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device using the pattern formation method. Also provided are: a monomer for manufacturing a resin for a semiconductor device manufacturing process having the above effects through use of the abovementioned monomer; and a resin, a method for manufacturing a resin, an actinic-ray-sensitive or radiation-sensitive resin composition, and an actinic-ray-sensitive or radiation-sensitive film which use the monomer.

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Inventors:

HATAKEYAMA NAOYA (JP)
GOTO AKIYOSHI (JP)
YONEKUTA YASUNORI (JP)

Application Number:

PCT/JP2016/083433

Publication Date:

June 29, 2017

Filing Date:

November 10, 2016

Export Citation:

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Assignee:

FUJIFILM CORP (JP)

International Classes:

C08F30/04; G03F7/038; G03F7/039; G03F7/075; G03F7/20; G03F7/32

Domestic Patent References:

WO2011039847A1	2011-04-07
WO2011125630A1	2011-10-13

Foreign References:

JP2008523220A	2008-07-03
JPS62235943A	1987-10-16
JP2013256658A	2013-12-26

Attorney, Agent or Firm:

TAKAMATSU Takeshi et al. (JP)

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