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Patent Searching and Data


Title:
PATTERN FORMATION METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/286736
Kind Code:
A1
Abstract:
The present invention provides: a pattern formation method with which it is possible to form a pattern that has excellent resolution and excellent uniformity; and a method for producing an electronic device. The pattern formation method according to the present invention includes: a resist film formation step for forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition that demonstrates higher solubility into an organic solvent when subjected to the effects of light exposure, an acid, a base, or heat; a light exposure step for exposing the resist film to light; and a development step for developing the light-exposed resist film using a developer that includes an organic solvent. The organic solvent includes: an ester-based solvent having no more than six carbons; and a hydrocarbon-based solvent.

Inventors:
MARUMO KAZUHIRO (JP)
TAKAHASHI SATOMI (JP)
ISHIJI YOHEI (JP)
SHIRAKAWA MICHIHIRO (JP)
GOTO AKIYOSHI (JP)
Application Number:
PCT/JP2022/027257
Publication Date:
January 19, 2023
Filing Date:
July 11, 2022
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
C08F12/02; C08F20/18; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
WO2017002737A12017-01-05
WO2017002737A12017-01-05
WO2018193954A12018-10-25
WO2020066824A12020-04-02
WO2017154345A12017-09-14
WO2020004306A12020-01-02
Foreign References:
JP2017146521A2017-08-24
JP2018081307A2018-05-24
JP2014059543A2014-04-03
JP2013061648A2013-04-04
JP2009267112A2009-11-12
US20160070167A12016-03-10
US20150004544A12015-01-01
US20160237190A12016-08-18
US20160274458A12016-09-22
Other References:
SOLARIS, ADVANCED CHEMISTRY DEVELOPMENT (ACD/LABS, 1994
OPTICS AND PHOTONICS (PROC. OF SPIE, vol. 6924, 2008, pages 692420
"Semiconductor Process Textbook", 2007, SEMI JAPAN, article "Chapter 4 Etching"
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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