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Patent Searching and Data


Title:
PATTERN FORMING METHOD, ION IMPLANTATION METHOD, METHOD FOR PRODUCING SOLID-STATE IMAGING ELEMENT, MULTILAYER RESIST FILM, AND ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2019/064970
Kind Code:
A1
Abstract:
Provided is a pattern forming method which is capable of forming a pattern that has excellent resolution, while exhibiting excellent shielding performance during ion implantation. Also provided are an ion implantation method and a method for producing a solid-state imaging element, each of which uses the above-described pattern forming method. Also provided are a multilayer resist film and an active light sensitive or radiation sensitive resin composition, each of which is used in the above-described pattern forming method. This pattern forming method comprises: a step for forming, on a substrate, a multilayer resist film which comprises a first resist film having a film thickness of 5 μm or more and a second resist film that is arranged on the first resist film and has a higher film density than the first resist film; a light exposure step for exposing the multilayer resist film to light; and a development step for developing the light-exposed multilayer resist film.

Inventors:
NISHIDA YOICHI (JP)
HIGASHI KOHEI (JP)
HATAKEYAMA NAOYA (JP)
Application Number:
PCT/JP2018/030171
Publication Date:
April 04, 2019
Filing Date:
August 13, 2018
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/095; G03F7/039; G03F7/20
Foreign References:
JP2013232665A2013-11-14
JP2007042395A2007-02-15
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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