PATTERN-FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2012/115043

A1

A pattern-forming method for forming a predetermined pattern which serves as a mask when etching a film to be processed on a substrate includes the following: an organic film pattern-forming step for forming an organic film pattern on the film to be processed on a substrate; a film-forming step for forming a silicon nitride film on the organic film pattern; and a silicon nitride film pattern-forming step for etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern and then removing the organic film pattern and forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C, the film-forming step excites a processing gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having film stress of no more than 100 MPa.

ISHIKAWA HIRAKU (JP)
HAYASHI TERUYUKI (JP)
MATSUOKA TAKAAKI (JP)
ONO YUJI (JP)

PCT/JP2012/053986

August 30, 2012

February 20, 2012

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TOKYO ELECTRON LTD (JP)
ISHIKAWA HIRAKU (JP)
HAYASHI TERUYUKI (JP)
MATSUOKA TAKAAKI (JP)
ONO YUJI (JP)

H01L21/3065; H01L21/3213; H01L21/768

JP2010511306A	2010-04-08
JP2005166400A	2005-06-23
JPH07235615A	1995-09-05
JP2009246131A	2009-10-22
JP2008214677A	2008-09-18
JP2003297830A	2003-10-17
JPH07169833A	1995-07-04
JP2009278039A	2009-11-26

HAGIWARA, Yasushi et al. (JP)
Yasushi Hagiwara (JP)

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