Title:
PATTERN FORMING METHOD AND PROCESSING SOLUTION
Document Type and Number:
WIPO Patent Application WO/2019/026885
Kind Code:
A1
Abstract:
Provided is a pattern forming method which exhibits various excellent properties such as good LWR, sensitivity, DOF and suppression of film thinning in a step for forming a pattern of a resist film, and which enables the formation of a resist pattern that has fewer development defects.
A pattern forming method which comprises (1) a step for forming a resist film on a substrate with use of a photoresist composition, (2) a step for exposing the resist film to light, (3) a step for forming a pattern by developing the light-exposed resist film by means of a developer liquid, and (4) a step for processing the pattern by means of a processing solution. This pattern forming method is configured such that: the photoresist composition contains (A) a polymer which has a structural unit (I) containing an acid-cleavable group that is cleft by the action of an acid, and the solubility of which in the above-described developer liquid is decreased by dissociation of the acid-cleavable group, and (B) a radiation sensitive acid generator; and the processing solution has acidity.
Inventors:
SHIMIZU MAKOTO (JP)
KAWAJIRI RYO (JP)
ICHINOHE DAIGO (JP)
KAWAJIRI RYO (JP)
ICHINOHE DAIGO (JP)
Application Number:
PCT/JP2018/028599
Publication Date:
February 07, 2019
Filing Date:
July 31, 2018
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/32; C08F20/10; G03F7/038; G03F7/039; G03F7/20; H01L21/027
Domestic Patent References:
| WO2017057253A1 | 2017-04-06 |
Foreign References:
| JP2013011833A | 2013-01-17 | |||
| JP2011033841A | 2011-02-17 | |||
| JP2009015158A | 2009-01-22 | |||
| JP2005352133A | 2005-12-22 | |||
| JPH11352701A | 1999-12-24 | |||
| US4535054A | 1985-08-13 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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