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Patent Searching and Data


Title:
PATTERN-FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2013/061601
Kind Code:
A1
Abstract:
The present invention relates to a pattern-forming method can be applied to a reduction in line width of a resist pattern used for the lithography. The pattern-forming method includes applying a photoresist composition to a substrate to form a resist film. The photoresist composition includes an acid generator and a first polymer that includes an acid-dissociable group. The resist film is exposed. The resist film is developed using a developer having an organic solvent content of 80 mass% or more to form a prepattern of the resist film. A polymer film having a phase separation structure in a space defined by the prepattern is formed using a composition that includes a plurality of second polymers. A part of the phase separation structure of the polymer film is removed.

Inventors:
NAMAI HAYATO (JP)
NAKAGAWA HIROKI (JP)
HARADA KENTARO (JP)
NARUOKA TAKEHIKO (JP)
Application Number:
PCT/JP2012/006869
Publication Date:
May 02, 2013
Filing Date:
October 25, 2012
Export Citation:
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Assignee:
JSR CORP (JP)
International Classes:
G03F7/32; G03F7/40; H01L21/027
Domestic Patent References:
WO2012169620A12012-12-13
Foreign References:
US20090214823A12009-08-27
JP2008310314A2008-12-25
Other References:
DANIEL P. SANDERS ET AL.: "Integration of Directed Self-Assembly with 193 nm Lithography", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, vol. 23, no. 1, 16 July 2010 (2010-07-16), pages 11 - 18, XP055057906
JOY Y. CHENG ET AL.: "Simple and Versatile Method To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist", ACS NANO, vol. 4, no. 8, 15 July 2010 (2010-07-15), pages 4815 - 4823, XP055007223
Attorney, Agent or Firm:
AMANO, Kazunori (6th Floor Fujikogyo-Nishimotomachi Building, 1-18, Aioi-cho 1-chome, Chuo-ku, Kobe-sh, Hyogo 25, JP)
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Claims: