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Patent Searching and Data


Title:
PATTERN FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/031409
Kind Code:
A1
Abstract:
Provided is a pattern forming method which has a high filling rate and a small contact angle of a resist on a layer that is mainly composed of carbon such as SOC, and which is free from the occurrence of pattern separation. This pattern forming method sequentially comprises in the following order: an arrangement step wherein a curable composition is arranged on a base layer (102) of a substrate (101); a mold contact step wherein the curable composition and a mold (106) are brought into contact with each other; a light irradiation step wherein the curable composition is irradiated with light, thereby forming a cured film (108); and a mold release step wherein the cured film (108) and the mold (106) are separated from each other. With respect to this pattern forming method, the proportion of the number of carbon atoms relative to the total number of atoms in the base layer (102) is 80% or more; and the arrangement step comprises a first arrangement step wherein a curable composition (A1) (103) that does not substantially contain a fluorine-based surfactant is arranged on the base layer (102), and a second arrangement step wherein droplets of a curable composition (A2) (104), which has a fluorine-based surfactant concentration of 1.1% by mass or less in the components excluding the solvent, are discretely dropped on the curable composition (A1) (103).

Inventors:
SAITO TOMOHIRO (JP)
ITO TOSHIKI (JP)
OTANI TOMONORI (JP)
Application Number:
PCT/JP2018/029246
Publication Date:
February 14, 2019
Filing Date:
August 03, 2018
Export Citation:
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Assignee:
CANON KK (JP)
International Classes:
H01L21/027; B29C59/02; C08F20/00
Foreign References:
JP2009016000A2009-01-22
JP2004342337A2004-12-02
JP2016162863A2016-09-05
JP2012169434A2012-09-06
JP2016157782A2016-09-01
JP2010258421A2010-11-11
Attorney, Agent or Firm:
OKABE Yuzuru et al. (JP)
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