Title:
PATTERN-FORMING PROCESS UTILIZING RADIATION-INDUCED GRAFT POLYMERIZATION REACTION
Document Type and Number:
WIPO Patent Application WO/1989/001187
Kind Code:
A1
Abstract:
A pattern-forming process utilizing radiation-induced graft polymerization reaction, which comprises conducting pattern formation using a resist capable of undergoing radiation-induced graft polymerization reaction and having excellent dry etching resistance, i.e., a phenyl group-containing polymethacrylate, or polystyrene or its derivative. This process enables a fine resist pattern to be formed even in an extremely low dose, and permits good etching work utilizing existing dry etching technique.
Inventors:
MOCHIJI KOZO (JP)
OIZUMI HIROAKI (JP)
SODA YASUNARI (JP)
OGAWA TARO (JP)
KIMURA TAKESHI (JP)
OIZUMI HIROAKI (JP)
SODA YASUNARI (JP)
OGAWA TARO (JP)
KIMURA TAKESHI (JP)
Application Number:
PCT/JP1988/000691
Publication Date:
February 09, 1989
Filing Date:
July 11, 1988
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
G03C5/00; G03F7/00; G03F7/027; G03F7/038; G03F7/38; H01L21/027; H01L21/30; H01L21/302; H01L21/3065; (IPC1-7): G03C5/00; G03F7/00; G03F7/26; H01L21/30; G03C1/72
Foreign References:
| JPS58194336A | 1983-11-12 | |||
| JPH06148921A | 1994-05-27 | |||
| JPH06147641A | 1994-05-27 | |||
| JPS60501777A | 1985-10-17 | |||
| JPH05886726A | ||||
| JPS53137671A | 1978-12-01 | |||
| JPS49134404A | 1974-12-24 |
Other References:
See also references of EP 0328655A4
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