PATTERNED BURIED INSULATOR - INFINEON TECHNOLOGIES CORP

Title:

PATTERNED BURIED INSULATOR

Document Type and Number:

WIPO Patent Application WO2002047144

Kind Code:

A3

Abstract:

A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.

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Inventors:

CHEN BOMY A
HIRSCH ALEXANDER
IYER SUNDAR K
ROVEDO NIVO
WANN HSING-JEN
ZHANG YING

Application Number:

PCT/US2001/045195

Publication Date:

February 13, 2003

Filing Date:

November 29, 2001

Export Citation:

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Assignee:

INFINEON TECHNOLOGIES CORP (US)
IBM (US)

International Classes:

H01L21/762; H01L21/8234; H01L29/06; (IPC1-7): H01L21/336; H01L21/762; H01L29/06; H01L29/78

Foreign References:

US5972758A	1999-10-26
EP1039546A1	2000-09-27
EP0535814A1	1993-04-07

Other References:

PATENT ABSTRACTS OF JAPAN vol. 006, no. 200 (E - 135) 9 October 1982 (1982-10-09)

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