received by the International Bureau on 20 July 2017 (20.07.2017)

AMENDMENTS TO THE CLAIMS

This listing of claims will replace all prior versions and listings of claims in the application:

LISTING OF CLAIMS:

1. (Original) A chuck for semiconductor wafer, comprising:

a body having an insulating top surface;

a plurality of elongated bending means, each configured to cause bending of the wafer upon thermal expansion, such that the wafer assumes a corrugated shape, and wherein all of the elongated bending means are positioned parallel to each other;

an electrode embedded within the body.

2. (Original) The chuck of claim 2, wherein the electrode comprises a plurality of elongated electrode plates, each electrode plate positioned between two elongated bending means.

3. (Original) The chuck of claim 2, wherein each of the elongated bending means extends through entire length of the insulating top surface.

4. (Original) The chuck of claim 3, wherein each of the elongated bending means comprises a linear mesa.

5. (Original) The chuck of claim 3, wherein each of the elongated bending means comprises a plurality of linear mesas arranged along a single row.

6. (Original) The chuck of claim 1, wherein the electrode comprises a single electrode plate.

7. (Original) The chuck of claim 6, wherein each of the elongated bending means comprises a linear trench extending through entire length of the insulating top surface.

8. (Original) The chuck of claim 6, wherein each of the elongated bending means extends through part of the insulating top surface, such that an anchoring area is defined on the top surface having no elongated bending means therein.

9. (Original) The chuck of claim 8, wherein each of the elongated bending means comprises a linear trench.

10. (Original) The chuck of claim 9, further comprising an anchor mechanically constraining motion of the chuck at one side, and enabling thermal expansion of the chuck on opposite side.

11. (Original) A chuck for semiconductor wafer, comprising a plate having a top surface, a plurality of elongated straight ribs, each elongated straight rib extending the entire length of the top surface of the chuck, wherein the width and height of each elongated rib is configured such that when a chucking potential is applied to the chuck, the wafer bends around each elongated rib so that back surface of the wafer contacts the top surface of the chuck and the number of elongated ribs is configure to generate an expansion compensation to compensate for thermal expansion of the wafer upon heating.

12. (Original) The chuck of claim 11, further comprising a plurality of elongated electrodes embedded within the chuck and each electrode positioned between two elongated ribs.

13. (Original) The chuck of claim 11, further comprising an anchor mechanically constraining motion of the chuck at one side, and enabling thermal expansion of the chuck on opposite side.

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14. (Original) The chuck of claim 11, wherein the top surface is an insulator.

15. (Original) The chuck of claim 11, wherein the top surface comprises anodized aluminum.

16. (Original) The chuck of claim 11, wherein the elongated straight ribs surface are insulators.

17. (Original) The chuck of claim 11, wherein the elongated straight ribs comprise anodized aluminum.

18. (Original) The chuck of claim 11, wherein the width and height of each elongated rib is configured to enable a bending of the wafer to a deflection angle of up to ten degrees, wherein the deflection angle is defined by an angle from the top surface of the chuck to a line that is tangential to a bump caused by bending of the wafer.

19. (Original) A method for processing a semiconductor wafer, comprising:

providing a chuck having a top surface and a plurality of elongated bending means formed on the top surface;

placing the wafer on the chuck;

determining thermal expansion of the wafer;

applying a chucking potential to the chuck so as to cause the wafer to bend about each of the elongated bending means so that the wafer assumes a corrugated topography.

20. (Original) The method of claim 19, further comprising increasing the chucking potential according to temperature increase of the wafer.

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21. (Original) The method of claim 20, further comprising mechanically anchoring one side of the chuck.

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